Infineon's 3rd Generation Reverse Conducting IGBTs have been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. Infineon RC-H technology has set the benchmark of T_j(max) of 175°C to offer higher lifetime reliability. Recent portfolio extension to 30A and 40A at 1200V and 1350V defines the new trend for higher power density and better reliability devices. 40A 1350V device is capable for switching up to 50kHz with V_CE(sat) value of 1.65V at 25°C – a staggering 5% lower loss than the next best competitor.