ROHM Semiconductor SiC Power Modules
Time：2021-04-20 Reading：121
ROHM Semiconductor SiC power modules are Half Bridge SiC modules that integrate a SiC SBD and SiC MOSFET into a single package. These ROHM SiC modules provide high frequency through reduced switching loss.
These SiC power modules reduce inductance by half compared to similarly rated IGBT modules. This reduced inductance allows for devices rated at up to 300A. An integrated thermistor prevents excessive heat generation.
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Features
- High frequency operation through reduced switching loss
- Switching loss is significantly reduced compared with similarly rated IGBT modules
- Safer design supports larger currents
- Original design technology reduces inductance by half, enabling development of 300A rated modules
- Integrated thermistor prevents excessive heat generation
Device configuration
- Half Bridge SiC module that integrates a SiC Schottky barrier diode and SiC MOSFET into a single package
- Equivalent package to standard IGBT modules
- Built-in thermistor
- Tjmax = 175ºC
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Block Diagram
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